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With the increasing power requirements of Artificial Intelligence (AI) processors, server power supplies (PSUs) must deliver more and more power without exceeding the defined dimensions of the server racks. This is driven by a surge in energy demand of high-level GPUs, which could consume 2 kW and more per chip by the end of the decade.
These needs, as well as the emergence of increasingly demanding applications and the associated specific customer requirements have prompted Infineon Technologies AG to extend the development of SiC MOSFETs to voltages below 650 V. The company is now launching the new CoolSiC™ MOSFET 400 V family, which is based on the second generation (G2) CoolSiC technology introduced earlier this year.
The new MOSFET portfolio was specially developed for use in the AC/DC stage of AI servers, complementing Infineon’s recently announced PSU roadmap. The devices are also ideal for solar and energy storage systems (ESS), inverter motor control, industrial and auxiliary power supplies (SMPS) as well as solid-state circuit breakers for residential buildings.
“Infineon offers an extensive portfolio of high-performance MOSFETs and GaN transistors to meet the demanding design and space requirements of AI server power supplies”, said Richard Kuncic, Head of the Power Systems Business Line at Infineon. “We are committed to supporting our customers with advanced products such as the CoolSiC MOSFETs 400 V G2 to drive highest energy efficiency in advanced AI applications.”
The new family features ultra-low conduction and switching losses when compared to existing 650 V SiC and Si MOSFETs. Implemented in a multi-level PFC, the AC/DC stage of the AI Server PSU can attain a power density of more than 100 W/in³ and is proven to reach 99.5 percent efficiency.
This is an efficiency improvement of 0.3 percentage points over solutions using 650 V SiC MOSFETs. In addition, the system solution for AI Server PSUs is completed by implementing CoolGaN™ transistors in the DC/DC stage. With this combination of high-performance MOSFETs and transistors, the power supply can deliver more than 8 kW with an increase in power density by a factor of more than 3 compared to current solutions.
The new MOSFET portfolio comprises a total of 10 products: five R DS(on) classes from 11 to 45 mΩ in Kelvin-source TOLL and D²PAK-7 packages with .XT package interconnect technology. The drain-source breakdown voltage of 400 V at T vj = 25°C. makes them ideal for use in 2- and 3-level converters and for synchronous rectification.
The components offer high robustness under harsh switching conditions and are 100 percent avalanche tested. The highly robust CoolSiC technology in combination with the .XT interconnect technology enables the devices to cope with power peaks and transients caused by sudden changes in the power requirements of the AI processor. Both the connection technology and a low and positive R DS(on) temperature coefficient enable excellent performance under operating conditions with higher junction temperatures.
Original – Infineon Technologies
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The influence of artificial intelligence (AI) is driving up the energy demand of data centers across the globe. This growing demand underscores the need for efficient and reliable energy supply for servers. Infineon Technologies AG opens a new chapter in the energy supply domain for AI systems and unveils a roadmap of energy efficient power supply units (PSU) specifically designed to address the current and future energy need of AI data centers.
By introducing unprecedented PSU performance classes, Infineon enables cloud data center and AI server operators to reduce their energy consumption for system cooling. The innovative PSUs reduce power consumption and CO 2 emissions, resulting in lower lifetime operating costs. The powerful PSUs are not only used in future data centers but can also replace existing power supply units in servers and increase efficiency.
In addition to the current PSUs with an output of 3 kW and 3.3 kW available today, the new 8 kW and 12 kW PSUs will contribute to further increasing energy efficiency in future AI data centers. With the 12 kW reference board, Infineon will offer the world’s first power supply unit that achieves this level of performance and supplies future data centers with power.
“At Infineon, we power AI. We are addressing a critical question of our era – how to efficiently meet the escalating energy demands of data centers,” says Adam White, Division President Power & Sensor Systems at Infineon. “It’s a development that was only possible by Infineon’s expertise in integrating the three semiconductor materials silicon (Si), silicon carbide (SiC), and gallium nitride (GaN) into a single module. Our PSU portfolio is therefore not only an example of Infineon’s innovative strength, which leads to first-class results in terms of performance, efficiency and reliability for data centers and the AI ecosystem. It also reinforces Infineon’s market leadership in power semiconductors.”
Infineon is responding to the requirements of data center operators for higher system efficiency and lower downtimes. The growth of server and data center applications has led to an increase in power requirements, necessitating the development of power supplies with higher power ratings from 800 W up to 5.5 kW and beyond. This increase is driven by the growing power requirements of Graphic Process Units (GPU) on which AI applications are computed.
High-level GPUs now require up to 1 kW per chip reaching 2 kW and beyond by the end of the decade. This will lead to higher overall energy demand for data centers. Depending on the scenario, data centers will account for up to seven percent of global electricity consumption by 2030; this is an order of magnitude comparable to India’s current electricity consumption.
Infineon’s new PSUs contribute to the efforts to limit the CO 2 footprint of AI data centers despite the rapidly growing energy requirements. This is made possible by a particularly high level of efficiency that minimizes power losses. Infineon’s new generation PSUs achieve an efficiency of 97.5 percent and meet the most stringent performance requirements. The new 8 kW PSU is capable of supporting AI racks with an output of up to 300 kW and more. Efficiency and power density is increased to 100 watts per in³ compared to 32 W/in³ in the available 3 kW PSU, providing further benefits for the system size and cost savings for operators.
From a technical perspective, this is made possible by the unique combination of the three semiconductor materials Si, SiC and GaN. These technologies contribute to the sustainability and reliability of AI server and data center systems. Innovative semiconductors based on wide-bandgap materials such as SiC and GaN are the key to a conscious and efficient use of energy to drive decarbonization.
The 8 kW Power Supply Unit will be available in Q1 2025. For more information about the PSU roadmap, please click here.
Infineon at the PCIM Europe 2024
PCIM Europe will take place in Nuremberg, Germany, from 11 to 13 June 2024. Infineon will present its products and solutions for decarbonization and digitalization in hall 7, booths #470 and #169. Company representatives will also be giving several presentations at the accompanying PCIM Conference and Forums, followed by discussions with the speakers. Information about Infineon’s PCIM 2024 show highlights is available at www.infineon.com/pcim.
Original – Infineon Technologies
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Soitec and Tokai Carbon, a comprehensive manufacturer of carbon and graphite products, have entered into a strategic partnership for the development and supply of polycrystalline silicon carbide substrates specifically designed for Soitec SmartSiC™ wafers.
Silicon carbide is a disruptive compound semiconductor and SmartSiC™ engineered substrates accelerate the adoption of silicon carbide for electric mobility, industrial and smart grid applications by delivering superior manufacturing and cost efficiencies with an improved environmental footprint.
Under this partnership, which will see Tokai Carbon supply 150mm and 200mm poly-SiC wafers to Soitec, the two companies are harnessing their advanced R&D capabilities to enhance the SmartSiC™ ecosystem. Tokai Carbon’s advanced technology and manufacturing capacity in polycrystalline silicon carbide (polySiC) combined with the right to use Soitec specifications for polySiC coarse wafers compliant with Soitec SmartSiC™ is expected to make a strategic contribution to the global ramp-up of SmartSiC™ wafer production.
Cyril Menon, Chief Operations Officer of Soitec, stated: “This partnership with Tokai marks yet another key step in the ramp-up of Soitec’s SmartSiC™ technology to address fast-growing markets such as electric mobility and industrial electrification. Tokai’s top quality SiC products and R&D capabilities, combined with Soitec’s innovative SmartSiC™ technology, can help to accelerate global adoption of electric mobility and other SiC technologies. This is an important milestone in terms of perception and value creation for the SmartSiC™ ecosystem.”
Hajime Nagasaka, CEO of Tokai Carbon, commented. “The polycrystalline SiC substrate to be supplied to Soitec is a strategic product in our solid SiC product series. We are pleased to see our long years of research and development come to fruition in this way, and we have high expectations for this product in the SiC semiconductor market, which is expected to expand significantly in the future. The partnership with Soitec is also very meaningful in terms of contributing to the realization of a sustainable society.”
Original – Soitec
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X-FAB and Soitec will begin work to offer Soitec’s SmartSiC™ wafers for the production of silicon carbide power devices at X-FAB’s plant in Lubbock, Texas.
This collaboration follows the successful completion of the assessment phase, during which silicon carbide (SiC) power devices were manufactured at X-FAB Texas on 150mm SmartSiC™ wafers. Soitec will offer X-FAB’s customers easy access to the SmartSiC™ substrate through a joint supply chain consignment model.
X-FAB is the pioneer and leader of the foundry model in the fast-growing SiC market. Silicon carbide (SiC) is a disruptive compound semiconductor material with intrinsic properties providing superior performance and efficiency over silicon in power applications.
SmartSiC™ is a proprietary Soitec technology based on the company’s SmartCut™ process, in which a thin layer of a high-quality monocrystalline (mono-SiC) ‘donor’ wafer is split off and bonded to a low resistivity polycrystalline (poly-SiC) ‘handle’ wafer. The resulting substrate offers improved device performance and manufacturing yields. The process allows multiple re-uses of a single donor wafer, significantly reducing cost and related CO2 emissions.In this fast-growing market, Soitec is ramping production of SmartSiC™ substrates at its new plant of Bernin, near Grenoble (France). X-FAB is increasing production capacity for SiC devices at the Lubbock plant. The use of the SmartSiC™ substrate enables X-FAB’s customers to design smaller devices, resulting in efficiency improvements through an increased number of dies per wafer. The benefit of reduced CO2 emissions from the substrate manufacturing process will also contribute to X-FAB’s initiative to reduce its overall carbon footprint.
Sophie Le-Guyadec VP Procurement of X-FAB, states: “As the leading SiC foundry, we want to provide our customers the full range of opportunities to design innovative and robust SiC devices for electric vehicles, renewable power and industrial applications. To offer the most advanced silicon carbide processes and manufacturing capabilities, we jointly agreed to provide our customers easy access to Soitec’s innovative SmartSiC™ via a consignment model.”
Emmanuel Sabonnadiere, Soitec Executive Vice President Automotive and Industry comments: “Soitec’s SmartSiC substrates and X-FAB’s foundry services are a perfect fit to meet increasing demand for new SiC products. This cooperation is a significant milestone for the deployment of SmartSiC in the U.S. market and internationally, thanks to X-FAB’s global footprint.”Original – X-FAB
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Nexperia announced that it is now offering its industry leading 1200 V silicon carbide (SiC) MOSFETs in D2PAK-7 surface mount device (SMD) packaging, with a choice of 30, 40, 60, and 80 mΩ RDSon values. This announcement follows on from Nexperia’s late-2023 release of two discrete SiC MOSFETs in 3 and 4-pin TO-247 packaging and is the latest offering in a series which will see its SiC MOSFET portfolio swiftly expand to include devices with RDSon values of 17, 30, 40, 60 and 80 mΩ in flexible package options.
With the release of the NSF0xx120D7A0, Nexperia is addressing the growing market demand for high performance SiC switches in SMD packages like D2PAK-7, which is becoming increasingly popular in various industrial applications including electric vehicle (EV) charging (charge pile, offboard charging), uninterruptible power supplies (UPS) and inverters for solar and energy storage systems (ESS).
It is also further testimony to Nexperia’s successful strategic partnership with Mitsubishi Electric Corporation (MELCO), which has seen the two companies join forces to push the energy efficiency and electrical performance of SiC wide bandgap semiconductors to the next level, while additionally future-proofing production capacity for this technology in response to ever growing market demand.
RDSon is a critical performance parameter for SiC MOSFETs because it impacts conduction power losses. However, many manufacturers concentrate on the nominal value, neglecting the fact that it can increase by more than 100% as device operating temperatures rise, resulting in considerable conduction losses.
Nexperia identified this as a limiting factor in the performance of many currently available SiC devices and leveraged the features of its innovative process technology to ensure that its new SiC MOSFETs offer industry-leading temperature stability, with the nominal value of RDSon increasing by only 38% over an operating temperature range from 25 °C to 175 °C.
Tightest threshold voltage, VGS(th) specification, allows these discrete MOSFETs to offer balanced current-carrying performance when connected in parallel. Furthermore, low body diode forward voltage (VSD) is a parameter which increases device robustness and efficiency, while also relaxing the dead-time requirement during freewheeling operation.
Original – Nexperia
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Transphorm, Inc. announced that its PCIM 2024 showcase will underscore its ability to outperform competitive wide bandgap technologies in higher power systems. For example, Transphorm’s normally-off d-mode SuperGaN®platform delivers higher electron mobility resulting in lower crossover losses versus Silicon Carbide—making it more a cost-effective, higher performing solution for various electric vehicle, datacenter/AI, infrastructure, renewable energy, and other broad industrial applications. To learn more, visit Transphorm during PCIM in Hall 7, Stall 108 during June 11 to 13, 2024.
Transphorm SuperGaN FETs are in production in a wide range of customer products crossing the power spectrum from low 45 W power adapters to higher power 7.5 kW PSUs. Many of these customer products are the first publicly recognized GaN-based systems of their kind and uniquely demonstrate advantages enabled only by the SuperGaN platform.
Examples include the previously mentioned liquid-cooled 7.5 kW PSU for mission-critical datacenter/blockchain applications; a 2.7 kW server CRPS with > 82 W/in3 power density (highest in any GaN power system available today); and 2.2 kW and 3 kW rack-mount 1U uninterruptible power supplies (UPSes). These design wins illustrate Transphorm’s ability to drive GaN into the various application markets composing an estimated GaN TAM of $8 billion by 2028.
In addition to real-world customer products, Transphorm continues to lead in technological achievements having recently demonstrated a 5 microsecond short-circuit withstand time, a bidirectional four-quadrant switch, and a 1200 V GaN-on-Sapphire device.
On-site demonstrations will include Transphorm solutions for 2- and 3-wheeler electric vehicle chargers along with customer PSUs for renewable energy systems, data centers, and more.
Speaking Engagement
Learn more about how Transphorm’s GaN solutions outperform competitive technologies and enable cross-industry innovations during the Bodo’s Power Systems session.
Panel: GaN Wide Bandgap Design, the Future of Power
Speaker: Philip Zuk, Senior Vice President, Business Development and Marketing
Date: June 12
Time: 2:20 – 3:20 p.m. CEST
Location: Hall 7, Stall 743Original – Transphorm
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Qromis, Inc. brings a revolutionary, high performance substrate solution for large-diameter GaN epi and device wafers. Rather than solving incremental scale and performance challenges of conventional substrates for WBG semiconductors, QST™ (Qromis Substrate Technology) has been developed and validated as a disruptive solution, with cross-functional optimization.
In this approach, the key properties of substrate material such as stress, lattice mismatch, thermal stability and shape control are engineered independently for the best fit with GaN epitaxial and device layers, as well as with different device architectures and performance targets. QST™ materials layers are integrated together in the conventional semiconductor fab with a simple manufacturing flow.
The resulting large diameter substrates (6-inch, 8-inch, 12-inch or beyond) are capable of supporting from a few to tens of microns of high-quality GaN epitaxy, from which unique, high performance and low cost GaN device structures are fabricated.Qromis is designing reference devices for device manufacturers to demonstrate the benefits of the groundbreaking QST™ technology. These devices exploit key advantages of QST™ over other substrate solutions:
– High quality and stress-free GaN,
– Ability to deposit thick, bulk-like GaN epi layers on large diameter substrates,
– Low defectivity, eliminating a major limitation to performance and scalability.
With these distinct features, designers can now break free from the current technological limitations of GaN process technologies and develop advanced device architectures for lateral and vertical device designs of light emitters, switches, rectifiers, as well as monolithic and integrated circuits.Qromis, Inc., established in March 2015 and located in Silicon Valley, California, is a privately held fabless technology innovator focusing on energy efficient and high performance wide bandgap (WBG) semiconductor materials and device solutions which dramatically reduce global energy use and consumption. The Company is poised to become one of the premier players in the rapidly growing, multi-billion dollar WBG industry with its disruptive and validated solutions in substrate and device technologies, which enable an unmatched cost, performance, and application scale. Markets served include power electronics, light emitting diodes (LEDs), advanced displays, and RF electronics, and other emerging high performance and energy efficient applications.
As a fabless company, Qromis is driving the commercialization of its unique solutions in conjunction with its foundry network. The Company and its foundry partner offer WBG device foundry services, as well as access to advanced and novel process technology platforms, for its customers and partners.To learn more about Qromis and its substrate technology, join the International Conference on Compound Semiconductor Manufacturing Technology which takes place May 20-23, 2024 in Tucson, Arizona.
Original – Qromis
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Taiwan Semiconductor – a global supplier of discrete power electronics devices, LED drivers, analog ICs and ESD protection devices – announced a family of 650V silicon carbide Schottky barrier diodes which are suitable for high-efficiency AC-DC, DC-DC and DC-AC conversion applications.
Unlike silicon-based fast-recovery rectifiers, these SiC devices have negligible switching losses due to low capacitive charge (QC). This makes them suitable for high-speed switching applications, benefitting circuit designs with increased power density and can reduce overall solution size.
Key Features
- Max. junction temperature 175°C
- High-speed switching
- High frequency operation
- Positive temperature coefficient on VF
- SPICE Models available
- Thermal Models available
Applications
- AD-DC conversion – PFC Boost
- DC-DC, Solar inverters
- Data center and server power
- Telecom – Datacom power
- UPS systems
Circuit Functions
- PFC boost diode
- Free-wheeling diode
- Full wave bridge
- Vienna bridgeless circuit
Original – Taiwan Semiconductor
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Littelfuse, Inc. announced the launch of the IX4352NE Low-side SiC MOSFET and IGBT Gate Driver. This innovative driver is specifically designed to drive Silicon Carbide (SiC) MOSFETs and high-power Insulated Gate Bipolar Transistors (IGBTs) in industrial applications.
The key differentiator of the IX4352NE lies in its separate 9 A source and sink outputs, which enable tailored turn-on and turn-off timing while minimizing switching losses. An internal negative charge regulator also provides a user-selectable negative gate drive bias for improved dV/dt immunity and faster turn-off. With an operating voltage range (VDD – VSS) of up to 35 V, this driver offers exceptional flexibility and performance.
One of the standout features of the IX4352NE is its internal negative charge pump regulator, which eliminates the need for an external auxiliary power supply or DC/DC converter. This feature is particularly valuable for turning off SiC MOSFETs, saving valuable space typically required for external logic level translator circuitry. The logic input’s compatibility with standard TTL or CMOS logic levels further enhances space-saving capabilities.
The IX4352NE is ideally suited for driving SiC MOSFETs in various industrial applications such as:
- on-board and off-board chargers,
- Power Factor Correction (PFC),
- DC/DC converters,
- motor controllers, and
- industrial power inverters.
It’s superior performance makes it ideal for demanding power electronics applications in the electric vehicle, industrial, alternate energy, smart home, and building automation markets.
With its comprehensive features, the IX4352NE simplifies circuit design and offers a higher level of integration. Built-in protection features such as desaturation detection (DESAT) with soft shutdown sink driver, Under Voltage Lockout (UVLO), and thermal shutdown (TSD) ensure the protection of the power device and the gate driver. The integrated open-drain FAULT output signals a fault condition to the microcontroller, enhancing safety and reliability. Furthermore, the IX4352NE saves valuable PCB space and increases circuit density, contributing to overall system efficiency.
Notable improvements over the existing IX4351NE include:
- A safe DESAT-initiated soft turn-off.
- A thermal shutdown with high threshold accuracy.
- The charge pump’s ability to operate during thermal shutdown.
The new IX4352NE is pin-compatible, allowing for a seamless drop-in replacement in designs that specify the existing Littelfuse IX4351NE, which was released in 2020.
“The IX4352NE extends our broad range of low-side gate drivers with a new 9 A sink/source driver, simplifying the gate drive circuitry needed for SiC MOSFETs,” commented June Zhang, Product Manager, Integrated Circuits Division (SBU) at Littelfuse. “Its various built-in protection features and integrated charge pump provide an adjustable negative gate drive voltage for improved dV/dt immunity and faster turn-off. As a result, it can be used to drive any SiC MOSFET or power IGBT, whether it is a Littelfuse device or any other similar component available on the market.”
Original – Littelfuse
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Power Integrations announced an agreement to acquire the assets of Odyssey Semiconductor Technologies, a developer of vertical gallium-nitride (GaN) transistor technology. The transaction is expected to close in July 2024, after which all key Odyssey employees are expected to join Power Integrations’ technology organization.
The acquisition supports the company’s ongoing development roadmap for its proprietary PowiGaN™ technology, which is featured in many of the company’s product families including InnoSwitch™ ICs, HiperPFS™-5 power-factor-correction ICs and the recently launched InnoMux™-2 family of single-stage, multiple-output ICs. The company introduced 900- and 1250-volt versions of PowiGaN technology and products in 2023.
Commented Dr. Radu Barsan, Power Integrations’ vice president of technology: “Power Integrations has been at the forefront of GaN development and commercialization since we began shipping products with PowiGaN technology in 2018. We are executing on an ambitious roadmap that includes driving toward cost parity with silicon MOSFETs and expanding the voltage and power capabilities of PowiGaN.
Our goal is to commercialize a cost-effective high-current and high-voltage GaN technology to support higher-power applications currently served by silicon carbide (SiC), at a much lower cost and higher performance enabled by the fundamental material advantages of GaN over SiC. The experience of the Odyssey team in high-current vertical GaN will augment and accelerate these efforts, and we are delighted to add them to our team.”
Added Dr. Richard Brown, Odyssey co-founder and CEO: “The Odyssey team and I are excited to join Power Integrations in accelerating their GaN technology roadmap. As the first company to commercialize high-voltage GaN, Power Integrations continues to lead the industry in driving the technology forward in terms of cost, voltage and current, as well as the design of system-level products that take full advantage of the capabilities of GaN.”
Original – Power Integrations
