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According to a survey by Global Market Insights, Super Junction MOSFETs captured over 30% market share in the energy and power sector in 2023. Their applications span multiple domains, including electric vehicle charging stations, server and data center power supplies, LED drivers, solar inverters and home appliance controls.
The global Super Junction MOSFET market is projected to achieve a compound annual growth rate (CAGR) exceeding 11.5% by 2032. Super Junction MOSFETs offers robust assurance to customers seeking exceptional performance and stability backed by WeEn’s well-established reliability standards, comprehensive supply chain systems and continuously evolving technological roadmaps.
WeEn currently offers two series of Super Junction MOSFETs: G1 and G2. G2 Super Junction MOSFETs feature advanced design improvements, such as reduced cell pitch, low-resistance epitaxial layers, and shorter P-column depths. These innovations significantly reduce the device’s on-state resistance.
Simultaneously, WeEn precisely controlled the charge balance of the super junction structure, ensuring excellent avalanche ruggedness and low capacitive losses. This results in a balanced, outstanding performance in both hard and soft-switching applications that demand high efficiency, reliability, and superior thermal management.
The WSJ2M60R065D is one of the flagship products in WeEn’s G2 Super Junction MOSFET lineup. Available in various packages including TO-220, TO-220F, TO-247, and TOLL. It particularly excels in terms of on-state resistance. Compared to competitors’ products, the WSJ2M60R065D maintains more stable on-state resistance across different current densities. Within its maximum continuous current range, the resistance variation does not exceed 10%. This stability provides customers with reliable performance data. Furthermore, the WSJ2M60R065D adapts well to applications with varying power requirements, demonstrating exceptional performance across diverse and complex operating environments.
WeEn’s G2 MOSFETs are at the forefront of performance, with their Figure of Merit (FOM) on par with top global competitors. While ensuring stringent yield and process control, WeEn reserves more breakdown voltage margin for customers. 600V devices approach the standards of 650V devices available on the market, thoroughly safeguarding the reliability of customer applications. Moreover, the G2 MOSFET integrates a finely tuned fast recovery body diode, with a reverse recovery time (Trr) of only 123 ns. The body diode can withstand a commutation speed of 1000 A/μs without damage. This makes the WSJ2M60R065D particularly suitable for Zero Voltage Switching (ZVS) applications in soft-switching topologies, delivering high efficiency while handling irregular operating conditions.
However, the WSJ2M60R065D is not limited to soft-switching applications. It also demonstrates excellent performance in hard-switching applications. The WSJ2M60R065D offers significant advantages in terms of lower capacitive losses (Eoss) compared to top competitors. Additionally, its normalized ruggedness is significantly higher than the industry standard, enabling it to withstand higher overvoltage and oscillation. It also demonstrates stable and safe performance in hard-switching topologies such as Power Factor Correction (PFC) circuits.
WeEn consistently adheres to rigorous and reliable quality assessment practices. In accelerated aging tests, the company maintains a zero-tolerance policy for product failures. WeEn MOSFET products demonstrate excellent consistency in performance during high-temperature stress aging tests at 168, 500, and 1000 hours. Furthermore, WeEn conducts additional reviews of the ESD (Electrostatic Discharge) capability of the device to minimize quality issues during production, packaging, and transportation. The WSJ2M60R065D demonstrates a robust quality level with a CDM (Charged Device Model) capability exceeding 2000V and an HBM (Human Body Model) capability of over 4000V.
Original – WeEn Semiconductors
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WeEn Semiconductors announced an expansion to its range of high-performance and rugged IGBTs. Offering voltage ratings of 650V and 1200V, the new devices incorporate a fast recovery anti-parallel diode and boast extremely low leakage currents and exceptional conduction and switching characteristics at both high and low junction temperatures.
Based on an advanced fine trench gate field-stop (FS) technology, the new IGBTs provide a more uniform electric field within the chip, support higher breakdown voltages and offer improved dynamic control. By offering the optimum trade-off between conduction and switching losses, as well as an enhanced EMI design, the devices will maximize efficiency in a wide variety of mid- to high-switching-frequency power conversion designs.
The new IGBTs offer ratings of 650V/75A, 1200V/40A and 1200V/75A and are supplied in TO247 or TO247-4L packages depending on the selected device. All of the devices will operate with a maximum junction temperature (Tj) of 175 °C and have undergone high-voltage H3TRB (high-humidity, high-temperature and high-voltage reverse bias) and 100%-biased HTRB (high-temperature reverse bias) tests up to this maximum.
Target applications for the new WeEn IGBTs include solar inverters, motor control systems, uninterruptible power supplies (UPS) and welding. A positive temperature coefficient simplifies parallel operation in applications where higher performance is required, while options for bare die, discrete and module product variants provide flexibility for a wide variety of target designs.
Original – WeEn Semiconductors
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WeEn Semiconductors unveiled new families of silicon carbide (SiC) MOSFETs and Schottky Barrier Diodes (SBDs) in TSPAK packaging at this year’s PCIM Europe exhibition and conference. The company has also used the event to showcase for the first time a comprehensive range of integrated SiC power modules in Nuremberg, from June 11-13, 2024.
WeEn Semiconductor’s new TSPAK MOSFET and SBD devices address the demand for high-performance, compact and reliable power management in applications ranging from automotive charging and on-board charger applications to photovoltaic (PV) inverters and high-power-density power supplies (PSUs).
Offering a variety of configuration options for maximum design flexibility, the company’s new SiC modules are ideal for applications such as EV charging, energy storage systems, PV inverters, motor drives, industrial PSUs and test instrumentation.
Originally developed for automotive applications, TSPAK devices combine innovative top-side cooling capability with low thermal impedance to deliver enhanced thermal performance. By removing the PCB thermal resistance from the thermal dissipating path, the Junction-Ambient thermal resistance improves by 16-19%.
This supports high reliability by enabling a greater number of power cycles than conventional packaging as well as providing the increased power densities demanded by compact system designs. Low circuit inductance and low EMC noise help to improve performance and reduce filtering requirements. The WeEn Semiconductors family of TSPAK MOSFETs features 650V, 750V, and 1200V options with resistances ranging from 12mΩ to 150mΩ. TSPAK SBDs are available with current ratings of 10 to 40A in 650V, 750V, and 1200V variants.
Visitors to WeEn’s stand in Hall 9, booth 538, will have the first opportunity to explore the company’s extensive range of SiC power modules. With a wide range of topology options, including half-bridge, four-pack, six-pack, and MPPT booster configurations, the power modules support voltages ranging from 650V to 1200V. Depending on the option chosen and special designs, modules incorporate a variety of advanced features including synchronized chip current sharing, integrated temperature sensors, topside cooling structures and the latest clip-bond technologies.
Original – WeEn Semiconductors
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WeEn Semiconductors will be exhibiting the company’s latest highly efficient, high-power density silicon carbide (SiC) technologies, automotive grade power devices and highly reliable IGBTs at PCIM Europe 2024 in Nuremberg from June 11-13, 2024.
Established in 1979, PCIM Europe serves as a premier platform for showcasing the latest advancements in power electronics technologies and applications. This year, in Hall 9, booth 538, under the theme of ‘Power Efficiency for a Cooler Planet,’ WeEn Semiconductors will exhibit its extensive range of high-voltage 1700V SiC power modules, SiC 1200V/750V MOSFETs, Thyristors, power diodes, silicon-controlled rectifiers (SCRs), IGBTs, and other advanced power devices tailored for the renewable energy and e-mobility industries.
With a focus on efficiency, sustainability and cost reduction, WeEn’s broad portfolio offers best-in-class performance, efficiency and density for demanding applications including solar and wind power storage, electric vehicle (EV) fast chargers and traction inverters, HVAC and datacenter servers.
“At WeEn, we are dedicated to developing cost-effective power control technologies that support high voltage ratings and efficient, high-performance operation,” remarked WeEn Semiconductors CEO, Markus Mosen. “We’re excited to showcase the solutions we’ve launched in recent months at PCIM, not least those technologies targeted at renewable energy and electric mobility applications that demonstrate our commitment to products that not only meet but exceed the unique demands of every application while contributing to environmental sustainability.”
PCIM 2024 highlights
- At PCIM, WeEn is set to introduce a range of SiC MOSFETs and SiC Schottky Barrier Diodes (SBDs) in TSPAK packages for EV charging, On Board Charger (OBC), PV inverters, and high power density PSU applications. The new MOSFETs are available in 650V, 750V, 1200V, and 1700V variants, with resistance ranging from 20mΩ to 150mΩ. The current range for the new SiC SBDs is 10 to 40A in 650V, 750V, and 1200V variants.
- A range of SiC power modules in half-bridge, four-pack, six-pack, dual booster, and NPC 3L topologies will also be on display. Target markets for these SiC modules include EV charging, energy storage systems, motor drivers, industrial power supply units (PSUs), test instruments, and PV inverters.
- 1700V SiC series and 1200V / 750V auto-grade SiC MOSFETs, which encompass a diverse range of packaging options and product configurations, including surface-mount device (SMD) discrete components and top-side cooling.
- Highly reliable thyristor/diode modules, suitable for mainstream industrial applications like UPS, Inverter, soft starter, with VDRM up to 1600V and IT(RMS) up to 250A . Thanks for its planar chip technology and state-of-art module manufacture capability, those modules can be in half-bridge, parallel or antiparallel or other customized topology, it has passed 1000 hours reliability test under JEDEC standard as well 100% Pb-Free for the highest level EU RoHS compliance.
- WeEn’s product platforms include Super Junction MOSFETs with breakdown voltage ranges of 600V, 650V, and 800V. Leveraging advanced 8-inch wafer technology, WeEn offers a wide range of trench MOSFETs with voltage ranges from 20V to 30V.
- With voltage ratings from 45V to 2000V, WeEn’s Power Diodes feature current ratings from 1A to 100A. The company’s product portfolio includes low VF Schottky rectifiers, standard diodes, and ultrafast recovery rectifiers.
- WeEn’s range of IGBTs boasts extremely low leakage currents and exceptional conduction and switching characteristics at both high and low junction temperatures. They have undergone high voltage H3TRB and 100%-biased HTRB tests with a maximum junction temperature of 175°C safely. These application-specific IGBTs have been tuned to match the precise needs of each application, including switching behaviors, conduction losses, short circuit capabilities, environmental ruggedness, and freewheeling diode characterization. The 1200V and 650V variant current products, including bare dies, discrete components, and PIMs, are offered to various end customers.
Original – WeEn Semiconductors
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As the “heart” of charging stations, the performance and reliability of charging modules are undeniably crucial. The popularization of the “super charging” concept has made long cruising range and short charging time become the selling points of more and more electric vehicles on the market.
Recently, the newly released Chinese Standard GB/T20234-2023, which focuses on Part 4: High-Power DC Charging Interfaces for Electric Vehicle Conductive Charging Couplers, has been significantly revised to expand the voltage range to 1500Vdc and the corresponding current range to 1000A. Additionally, the standard now includes new provisions related to liquid-cooled charging stations.
This means that in the future, higher-power megawatt-level charging stations will gradually become a reality. As long as your electric vehicle supports supercharging, it will be as convenient as refueling at a gas station.
Charging Module Technology Analysis
In fact, WeEn Semiconductors has long focused its business on the “low-carbon” track, while acknowledging that charging stations, as crucial supporting infrastructure, will evolve towards directions of higher power, greater efficiency, full liquid cooling, and comprehensive supercharging capabilities.
WeEn’s latest research and development effort, the BYC100MW-600PT2, will enable customers to achieve designs for 40kW+ high-power, high-efficiency charging modules. The WND60P20W will offer customers a higher voltage design margin to meet the demands of more complex and challenging application scenarios, thereby supporting the rapid development of new energy vehicles and the achievement of low-carbon objectives.
A charging module is essentially a power electronics converter that converts alternating current (AC) from power grid into direct current (DC) that can be stored in the battery of an electric vehicle.
Charging module converters typically have a two-stage topology. The first stage is usually a three-phase Power Factor Correction (PFC), most often using the Vienna PFC topology. Its main function is to convert AC to DC and to correct the power factor.
Figure 1: Vienna PFC Topology Architecture
The second stage typically involves a DC-DC conversion, most often using the high-efficiency LLC topology. This stage primarily converts the high voltage DC output from the PFC (800Vdc) into a wide range of adjustable DC voltages from 200Vdc to 1000Vdc, to match the needs of different battery voltage levels. Additionally, the DC-DC stage also achieves electrical isolation from the power grid through a high-frequency transformer.
Since the current charging modules are primarily used for delivering power to electric vehicles, the output rectification in the DC-DC stage commonly employs Fast Recovery Diodes (FRD). Benefiting from the negative temperature coefficient characteristics of Fast Recovery Diodes (FRD), and given that the LLC topology generally does not require stringent reverse recovery performance, FRDs are particularly suitable for use in charging modules that operate under high temperature and high current conditions.
Benefiting from the negative temperature coefficient characteristics of Fast Recovery Diodes (FRD), and given that the LLC topology generally does not require stringent reverse recovery performance, FRDs are particularly suitable for use in charging modules that operate under high temperature and high current conditions.
Figure 2: LLC DC- DC Topology Architecture
Currently, the mainstream power ratings for charging modules on the market range from 20kW to 40kW. Superchargers typically operate by outputting through several charging modules connected in parallel. Therefore, to ensure that each module is not affected by others during startup, Oring diodes are essential. When functioning normally, these diodes are in a conducting state, primarily incurring conduction losses. Consequently, standard rectifier diodes with low forward voltage (VF) are the best choice.
WeEn’s Professional Solutions
WeEn semiconductors, including the BYC75W-600P for LLC secondary-side rectification and the Oring diode WND60P16W, have been mass-produced reliably for years in leading charging module manufacturers’ 30kW models. With the recent trend towards higher power in charging modules and the need to accommodate for the harsh operating environments of charging stations, we have responded to our customers’ actual needs by launching the BYC100MW-600PT2 for 40kW charging modules and the higher voltage-resistant WND60P20W, helping our customers solve practical application issues.
#BYC100MW-600PT2 Features:
- Maximum current up to 100A
- Extremely low reverse leakage current
- Optimal VF-QRR trade-off performance
- Robust Eas capability
#WND60P20W Features:
- Maximum reverse voltage up to 2000 Vdc
- Extremely low forward conduction voltage drop
- Enhanced forward surge current capability
- Robust Eas capability
By comparing the specifications of the BYC100MW-600PT2 and BYC75W-600PT2, we find that the BYC100MW-600PT2 offers significant improvements in forward voltage (VF) while maintaining the same reverse recovery charge. As a result, it is more suitable for applications in 40kW high-power charging modules. Customers using the 40kW modules have observed an actual temperature rise reduction of 8°C to 10°C, which substantially enhances the thermal design of the system.
Figure 3: BYC100MW-600PT2 VF Curve
Figure 4: BYC100MW-600PT2 Qrr Curve
In the context of charging station applications, considering that there is quite a distance from the output of the charging module to the high-voltage power battery, potentially up to 30-40 meters, it is important to note that at the moment the charging module begins outputting, stray inductance in the charging cable and capacitors within the system will oscillate. This causes the diode to endure a spike in reverse voltage. If the voltage exceeds the diode’s avalanche voltage, it will cause avalanche breakdown; if the diode’s avalanche energy is insufficient, it will be damaged.
The WND60P20W is an enhancement of the existing WND60P16W product from WeEn Semiconductors, with the reverse withstand voltage increased to 2000Vdc while also improving its capability to withstand avalanche breakdown. The WND60P20W can meet the increasingly complex and harsh working environments of charging modules, providing greater safety margins for customer module designs.
Figure 5: Voltage Oscillation Across Oring Diode
Original – WeEn Semiconductors
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It’s noteworthy that WeEn had already won the prestigious Haier COSMOPlat Excellent Supplier Award two years ago. Winning the supplier award again demonstrates WeEn’s leadership position in the market as an outstanding semiconductor supplier.
Both parties are excited about each other’s innovative potential as they promote closer collaboration, further signaling that WeEn will deepen and solidify its robust partnership with Haier COSMOPlat to accelerate the future of digital transformation across their industries.
Dating back to the former NXP era, Haier COSMOPlat has been an important ecosystem partner for WeEn. In today’s uncertain environment, while joyful outcomes may be hard to come by, having a strong technical foundation as support provides both companies with more cooperation opportunities.
As Haier COSMOPIat pursues trends of domestic resource localization and diversification, WeEn has stood out with its high quality and stringent quality control standards. Its products not only meet COSMOPIat’s high demands for stability and reliability, but also receive strong endorsement from COSMOPIat’s customers for partnering with high-quality domestic suppliers to drive coordinated development. This positions WeEn well to capitalize on opportunities for business growth.
Since 2020, global semiconductor supply chains have been impacted, but WeEn has remained proactive in addressing challenges of upstream supply shortages. By adjusting strategic deployments ahead of time and continuously supporting Haier COSMOPIat’s supply needs, WeEn has further strengthened the partnership between the two companies.
Last year, both parties signed a strategic cooperation agreement at the Hannover Messe in Germany, establishing a strategic partnership based on mutual assistance and win-win cooperation. These initiatives comprehensively facilitate Haier COSMOPIat’s digital transformation, accelerating the upgrade of end-to-end competitiveness. Simultaneously, they lay a solid foundation for future collaboration between the two companies in new technologies and market domains.
The continued development of Haier COSMOPIat has brought new opportunities and challenges for both parties, especially in the areas of digital transformation and ecosystem empowerment. The business leader of Haier COSMOPIat stated, “WeEn is a leading player among Chinese power semiconductor suppliers, with extensive technological expertise and a global presence. Its products are characterized by high quality, reliability, and cost-effectiveness. Thanks to WeEn’s unique position in the power semiconductor field, the range and diversity of products in the collaboration between the two parties continues to expand. The product line now spans from thyristors to power diodes, and further extends to TVS/ESD and silicon carbide product series. The level of cooperation is deepening continuously, showcasing the strong partnership between the two companies. In the future, we look forward to working hand in hand with WeEn to further explore the potential for cooperation and accelerate the digital transformation of the industry.”
Will Yin, Vice President of Global Sales & Marketing at WeEn, stated, “There is no doubt that digital transformation brings tremendous development potential to the power semiconductor industry.” WeEn looks forward to long-term cooperation with Haier COSMOPIat to embrace new opportunities and challenges brought by digitization, intelligence, and sustainability. Together, we will build diverse new development opportunities and jointly create new chapters of development in various fields. WeEn always stands at the forefront of industry development, leveraging a strong R&D and technical team to continuously strengthen the market sales and service team. This is to achieve steady growth in global business and contribute to industry transformation and innovation.
By the end of 2023, Haier COSMOPIat had established a new structure where the three business sectors of smart home controllers, diversified smart controllers across industries, and an industrial Internet platform in the electronics industry progressed simultaneously. COSMOPIat’s digital transformation has not only enhanced the agility of the supply chain but has also provided robust support for the industry’s digital transformation and upgrade through technological innovation and ecosystem empowerment.
In the future, WeEn will continue to focus on four major application areas: consumer electronics, renewable energy, big data, and automotive electronics. Leveraging its technological research and development strengths, WeEn will continue to expand investments in the power semiconductor field, actively increase production capacity, and grow together with its extensive customer base.
Original – WeEn Semiconductors
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The opening ceremony of WeEnwin Jinshan Module Plant was held in the Shanghai Jinshan High-tech Industrial Development Zone. The ceremony marked the official commencement of WeEn’s world-first module plant, intended to produce various types of power module products utilized in consumer electronics, communications, new energy, and automotive applications. The products connect customers and the ecosystems, actively fostering the high-quality development of the industry.
Markus Mosen, WeEn Semiconductors Co., Ltd. CEO; Chen Song, COO; Tang Ziming, CFO; Wu Rui, CHRO; Peng Xijun, general manager of Shanghai New Jinshan Industrial Investment & Development Co., Ltd; Zhao Fei, deputy director of the Jinshan District Development and Reform Commission; Cao Qin, deputy director of the Jinshan District Investment Promotion Office; other relevant department heads of the New Jinshan Development Company; WeEn boards Zhang Xinyu, Chang Liang, and Zhu Fenglin; together with representatives from WeEn’s global partners, numerous customers, vendors, approximately 200 guests attended the event to personally witness this historic step in WeEn’s new journey.
Located in the Shanghai Bay Area High-tech Industrial and Development Zone, WeEn Jinshan Module Plant covers an area of 11,000 square meters. The construction of the plant began in August 2022. Eight months later in April 2023, the building quality and fire inspection compliance tests were successfully completed.
WeEn Semiconductors Co., Ltd. has invested approximately RMB 200 million in the wholly-owned new Jinshan Module Plant, which has introduced over a hundred of the industry’s most advanced power module production and testing equipment to meet the market’s mainstream demand for various types of module products.
It is worth underscoring that the newly established WeEnwin Module Plant has simultaneously set up an advanced packaging R&D center to develop and mass produce cutting-edge packaging technologies while researching the applicability of new materials.
To optimize efficiency and reliability, the fully automated module production line is equipped with top-notch processing capabilities, including lead-free chip bonding/silver sintering bonding, lead-free soldering/ultrasonic soldering of terminals, aluminum wire bonding, and copper tab connections. Currently, WeEnwin module plant. has obtained ISO9001 and IATF16949 certifications and undergone VDA6.3 process audits, evidence of the company’s robust system that guarantees top-quality products.
Peng Xijun, general manager of Shanghai New Jinshan Industrial Investment & Development Co., Ltd, warmly congratulated WeEnwin for the opening, noting that the event was a testimony of the concerted efforts of all parties. He further stated that the collective endeavors have significant importance in elevating the power semiconductor industry’s development level and accelerating the concentration of the optoelectronic chip industry in the high-tech industrial and development zone.
In addition, he expressed his wish for the high-tech zone, as it embarks on its new era journey, to continue harnessing resources and efforts and attracting policies aimed at strengthening the innovation chain, extending the industrial chain, and improving the ecosystem.
Meanwhile, Markus Mosen, WeEn Semiconductors Co., Ltd. CEO stated, “Given the favorable winds, this is the perfect time to set sail.” WeEn’s investment in the world’s first module factory has successfully transitioned from planning to operation according to schedule. Therefore, we remain grateful for the strong support from the Jinshan District People’s Government, Shanghai Bay Area High-tech Industrial Development Zone, and FITA Tech.
There is no doubt that without the collective efforts of our partners and team, this accomplishment would not have been possible. At WeEnwin, we will seize the opportunities of the era, leverage our product and technological strengths, and provide reliable and efficient power semiconductor devices to our customers and partners. As we inject new impetus into pragmatic cooperation, we remain confident in our ability to propel the ship of power device development toward a new journey.”
The operation of the WeEnwin Jinshan Module plant will enhance the efficiency of WeEn Semiconductors Co., Ltd.’s entire industry chain layout and services. In addition to producing the most advanced SCR / FRD / IGBT / SIC modules, the factory will significantly improve the experience of customers and partners by offering innovative modules and packaging services for the automotive and renewable energy markets. It is projected that the first batch of products from the new Jinshan Module Factory for Chinese and overseas customers will be shipped in the fourth quarter of 2023.
Original – WeEn Semiconductors
